6
RF Device Data
Freescale Semiconductor
MRF6S18060NR1 MRF6S18060NBR1
TYPICAL CHARACTERISTICS
?
1900 MHz
Figure 7. Power Gain and Drain Efficiency
versus CW Output Power
Figure 8. EVM versus Frequency
100
10
17
1
0
70
C
VDD
= 26 Vdc
IDQ
= 600 mA
f = 1960 MHz
TC
= ?30
C
?30
25C
85C
10
16
15
14
13
12
11
60
50
40
30
20
10
Pout, OUTPUT POWER (WATTS) CW
Figure 9. EVM and Drain Efficiency versus
Output Power
?55
?60
?65
?70
?75
1920
?80
Figure 10. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
f, FREQUENCY (MHz)
Pout= 35 W Avg.
25 W Avg.
10 W Avg.
VDD
= 26 Vdc
IDQ
= 450 mA
Pout, OUTPUT POWER (WATTS) AVG.
100
4
12
VDD
= 26 Vdc
IDQ
= 450 mA
f = 1960 MHz
EDGE Modulation
8
6
0
10
1
2
20
60
40
30
0
10
TC
= ?30
C, 25C
85C
Gps
TC
= ?30
C
25C
85C
?75
?45
0
Pout, OUTPUT POWER (WATTS) AVG.
?50
?55
?60
?65
?70
10
Figure 11. Spectral Regrowth at 400 kHz
versus Output Power
η
D
, DRAIN EFFICIENCY (%)
ηD
η
D
, DRAIN EFFICIENCY (%)
ηD
G
ps
, POWER GAIN (dB)
EVM, ERROR VECTOR MAGNITUDE (% rms)
2020
1
4
1900
3
2.5
1.5
1980
1960
1940
1920
3.5
2
EVM, ERROR VECTOR MAGNITUDE (% rms)
SPECTRAL REGROWTH @ 400 kHz (dBc)
SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc)
25C
85C
2000
10
50
EVM
?30C
25C
85C
1940 1960 1980 2000
VDD
= 26 Vdc
IDQ
= 450 mA
f = 1960 MHz
EDGE Modulation
Pout= 35 W Avg.
25 W Avg.
10 W Avg.
35 W Avg.
25 W Avg.
10 W Avg.
20 30 40 50 60
TC
= 85
C
25C
?30C
?85
?55
0
Pout, OUTPUT POWER (WATTS) AVG.
?60
?70
?75
?80
10
Figure 12. Spectral Regrowth at 600 kHz
versus Output Power
SPECTRAL REGROWTH @ 600 kHz (dBc)
20 30 40 50 60
?65
SR @ 400 kHz
SR @ 600 kHz
VDD
= 26 Vdc
IDQ
= 450 mA
f = 1960 MHz
EDGE Modulation
VDD
= 26 Vdc
IDQ
= 450 mA
f = 1960 MHz
EDGE Modulation
f, FREQUENCY (MHz)
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相关代理商/技术参数
MRF6S18060NR1
功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S18060NR1_08
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18100NBR1
功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S18100NR1
功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S18100NR1_08
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18140HR3
功能描述:射频MOSFET电源晶体管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S18140HR3_09
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MRF6S18140HR5
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